STMicroelectronics, a global leader in semiconductor solutions spanning multiple electronic applications, has announced a GaN technology development and manufacturing agreement with Innoscience , the world's leading provider of high-performance, cost-effective 8-inch GaN-on-Si (gallium nitride on silicon) manufacturing. This collaboration aims to leverage the strengths of both companies to enhance GaN power solutions and improve supply chain flexibility.

Under this agreement, the two companies will jointly develop GaN power technology to accelerate its adoption in consumer electronics, data centers, automotive, industrial power systems, and beyond. Additionally, the agreement enables Innoscience to utilize ST’s front-end manufacturing capabilities outside of China for GaN wafer production, while ST can access Innoscience’s front-end manufacturing capacity within China. This collaboration ensures greater supply chain resilience and flexibility, allowing both companies to expand their GaN product offerings to meet a broad spectrum of customer needs.

Marco Cassis, President of Analog, Power, Discrete, MEMS, and Sensors at STMicroelectronics, stated: “Both ST and Innoscience operate as integrated device manufacturers. Through this agreement, we will leverage this model to serve global customers more effectively. This partnership will accelerate ST’s GaN power technology roadmap, complementing our silicon and silicon carbide products, while also enabling us to adopt a more flexible manufacturing strategy to support our customers worldwide.”

Dr. Weiwei Luo, Chairman and Founder of Innoscience, commented: “GaN technology is essential for advancing electronics, enabling the development of smaller, more efficient systems that conserve energy, reduce costs, and lower CO₂ emissions. Innoscience pioneered high-volume 8-inch GaN production, shipping over one billion GaN devices to various markets. We are thrilled to establish this strategic collaboration with ST. By working together, ST and Innoscience will further accelerate the adoption of GaN technology. Our teams are committed to jointly developing the next generation of GaN solutions.”

GaN power devices leverage the intrinsic properties of gallium nitride to set new benchmarks in power conversion, motion control, and drive applications. These advancements significantly reduce energy loss, increase efficiency, and enable smaller, lighter designs—ultimately lowering overall solution costs and environmental impact. GaN technology is rapidly being adopted in consumer electronics, data centers, industrial power supplies, and solar inverters. Moreover, its substantial size and weight reduction benefits make it an ideal candidate for next-generation electric vehicle powertrain systems.