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See specs for product details.
See specs for product details.
MSCSM120X10CTYZBNMG
| Part No.: | MSCSM120X10CTYZBNMG |
| RoHs Status: | RoHS Compliant |
| Manufacturer/Brand: | Microchip Technology |
| Description: | PM-MOSFET-SIC-SBD-6HPD |
| Ship From: | Hong Kong |
| Datasheets: | |
| Shhipment Way: | DHL/Fedex/TNT/UPS/EM |
| Ladder Price: | Price negotiable |
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Part No.
MSCSM120X10CTYZBNMG
Operating Temperature
-55°C ~ 175°C (TJ)
Configuration
6 N-Channel (3-Phase Bridge)
Input Capacitance (Ciss) (Max) @ Vds
838pF @ 1000V, 1990pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs
64nC @ 20V, 137nC @ 20V
Mounting Type
Chassis Mount
Product Status
Active
Rds On (Max) @ Id, Vgs
100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1mA, 2.7V @ 2mA
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Package / Case
Module
Technology
Silicon Carbide (SiC)
Power - Max
116W (Tc), 196W (Tc)
Current - Continuous Drain (Id) @ 25°C
28A (Tc), 49A (Tc)
Package
Bulk
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